Can be scaled below 100 nmReduces Vt fluctuations between different cells due to process variationsAllows for low voltage operationAllows fast sensingProvides small off-state leakageProvides excellent disturb behaviorCan be constructed in a compact 4F2 cell sizeCan be extended to 3-D integrationCan .....
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Demonstrated in silico improvement of mask defect sensitivity (reduces false positives)Low power with efficient use of light means faster inspection timesCompatible with most computational algorithms which need strong reference/background signalLeverages industry standard platforms
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