Improved electrical properties of the resulting TFTDoes not require fabrication of a mask structure over the amorphous siliconProvides control over both the length and directionality of crystal growth
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Main Advantages of this InventionΓÇóHigh through-put assay measuring individual cells instead of population averageΓÇóReagent and label freeΓÇóMore accurate than current methods
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Functions in solar blind region Faster UV detection
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High Throughput Largest area graphene Stable and robust production of graphene sheets Reproducible
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