Media.Player

Oxyfluoride Phosphors for Use in White Light LEDs

Technology Benefits

•    High efficiency •    Good color rendering properties •    Variety of applications

Technology Application

•    LEDs •    Liquid Crystal Displays   This technology is available for licensing. Click here to request more information.

Detailed Technology Description

Researchers at the University of California, Santa Barbara have invented a novel Ce3+-doped oxyfluoride phosphor material for solid-state lighting applications. This invention produces much higher photoluminescence intensities than commercial Ce3+, allowing for tunability of emission color and excitation band, resulting better light quality with high efficiency. Moreover, this material can be used for white light generation with a number of phosphor combinations (near UV light with red, green-orange or yellow phosphors) and allows for greater color rendering.

Supplementary Information

Patent Number: WO2010148109A1
Application Number: WO2010US38852A
Inventor: IM, Won-Bin | SESHADRI, Ram | DENBAARS, Steven, P.
Priority Date: 16 Jun 2009
Priority Number: WO2010148109A1
Application Date: 16 Jun 2010
Publication Date: 23 Dec 2010
IPC Current: H01J000162
Assignee Applicant: The Regents of the University of California
Title: OXYFLUORIDE PHOSPHORS AND WHITE LIGHT EMITTING DIODES INCLUDING THE OXYFLUORIDE PHOSPHOR FOR SOLID-STATE LIGHTING APPLICATIONS | LUMINOPHORES DE TYPE OXYFLUORURE, ET DIODES ÉLECTROLUMINESCENTES BLANCHES COMPRENANT LE LUMINOPHORE DE TYPE OXYFLUORURE, POUR
Usefulness: OXYFLUORIDE PHOSPHORS AND WHITE LIGHT EMITTING DIODES INCLUDING THE OXYFLUORIDE PHOSPHOR FOR SOLID-STATE LIGHTING APPLICATIONS | LUMINOPHORES DE TYPE OXYFLUORURE, ET DIODES ÉLECTROLUMINESCENTES BLANCHES COMPRENANT LE LUMINOPHORE DE TYPE OXYFLUORURE, POUR DES APPLICATIONS D'ÉCLAIRAGE À L'ÉTAT SOLIDE
Summary: The apparatus is useful for solid state lighting applications.
Novelty: Apparatus for solid state lighting applications, comprises a LED for emitting light, and a phosphor optically coupled to the LED, where phosphor comprises a first phosphor that is mixed with a second phosphor to create a phosphor mixture

Industry

Optics

Sub Category

Lighting

Application No.

8344611

Others

Background

White light generation for most commercial light emitting diode (LED) lamps employ yellow Ce3+ phosphors excited by blue InGaN diodes due to their unsurpassed efficiency. However, the Ce3+ phosphors have relatively weak emissions in the red region. Moreover, the color output from these phosphors is strongly dependent on temperature and current, creating problems for high power LEDs.

 

 

Additional Technologies by these Inventors

• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Nonpolar (Al, B, In, Ga)N Quantum Well Design
• Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• GaN-Based Thermoelectric Device for Micro-Power Generation
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Growth of Planar Semi-Polar Gallium Nitride
• Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
• Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
• High Efficiency LED with Optimized Photonic Crystal Extractor
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• LED Device Structures with Minimized Light Re-Absorption
• (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
• III-V Nitride Device Structures on Patterned Substrates
• Growth of Semipolar III-V Nitride Films with Lower Defect Density
• Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
• Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
• Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
• Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
• Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
• Defect Reduction in GaN films using in-situ SiNx Nanomask
• Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
• Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
• Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
• High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-150)
• Method for Increasing GaN Substrate Area in Nitride Devices
• Flexible Arrays of MicroLEDs using the Photoelectrochemical (PEC) Liftoff Technique
• Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
• UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
• Low-Droop LED Structure on GaN Semi-polar Substrates
• Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
• Growth of High-Performance M-plane GaN Optical Devices
• Method for Enhancing Growth of Semipolar Nitride Devices
• Transparent Mirrorless (TML) LEDs
• Solid Solution Phosphors for Use in Solid State White Lighting Applications
• Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
• Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates
• High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
• High Light Extraction Efficiency III-Nitride LED
• Tunable White Light Based on Polarization-Sensitive LEDs
• Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
• Improved Anisotropic Strain Control in Semipolar Nitride Devices
• III-Nitride Tunnel Junction with Modified Interface
• Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
• Increased Light Extraction with Multistep Deposition of ZnO on GaN
• Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
• Stand-Alone Ceramic Phosphor Composites for Laser-Excited Solid-State White Lighting
• Contact Architectures for Tunnel Junction Devices
• New Blue Phosphor for High Heat Applications
• Methods for Fabricating III-Nitride Tunnel Junction Devices
• Single-Phase Full-Color Phosphor for LEDs
• Laser Diode System For Horticultural Lighting
• Fabricating Nitride Layers
• Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS
• Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
• Laser Lighting System Incorporating an Additional Scattered Laser

Tech ID/UC Case

23416/2009-704-0

Related Cases

2009-704-0, 2010-022-0

*Abstract

A novel Ce3+-doped oxyfluoride phosphor material for solid-state lighting applications.

 

 

*Applications

•    LEDs

*IP Issue Date

Jan 1, 2013

*Principal Investigator

Name: Ram Seshadri

Department:

Name: Steven DenBaars

Department:

Name: Won Bin Im

Department:

Country/Region

USA