Enhanced electron mobility at the interface between Gd2O3(100)/n-Si(100)
- Detailed Technology Description
- Patent No.: 9,000,432A multilayered structure is provided. The multilayered structure may include a silicon substrate and a film of gadolinium oxide disposed on the silicon substrate. The top surface of the silicon substrate may have silicon orientated in the 100 direction (Si(100)) and the gadolinium oxide disposed thereon may have an orientation in the 100 direction (Gd2O3(100)).
- *Abstract
-
A multilayered structure is provided. The multilayered structure may include a silicon substrate and a film of gadolinium oxide disposed on the silicon substrate. The top surface of the silicon substrate may have silicon orientated in the 100 direction (Si(100)) and the gadolinium oxide disposed thereon may have an orientation in the 100 direction (Gd2O3(100)).
- Country/Region
- USA
For more information, please click Here
