Phthalimide-based polymers for use in electrical devices - 1657
- *Abstract
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Overview
A new generation of optoelectronic devices such as organicthin film transistors (OTFTs), organic light emitting transistors (OLETs),organic light emitting diodes (OLEDs), printable circuits, organic photovoltaic(OPV) devices, electrochemical capacitors, and sensors are built upon organicsemiconductors as their active components. To enable high device efficienciessuch as large charge carrier mobilities (u) needed for transistor/circuitoperations, or efficient exciton formation/splitting that is necessary forOLED/OPV operations, it is desirable that both p-type and n-type organicsemiconductor materials are available. Therefore, new organic semiconductormaterials, particularly those that can have good charge transportcharacteristics, processing properties, and stability in ambient conditions.
Invention
UK researchers are developing organic semiconductor materials that are prepared from monomeric,oligomeric, and polymeric compounds having one or more phthalimide units and/orone or more head-to-head substituted biheteroaryl units. These compounds can exhibit properties such as excellent charge transport characteristics in ambient conditions, chemical stability, low-temperature processability, large solubility in common solvents, and processing versatility (e.g., via various solution processes). As a result, field effect devices such as thin film transistors that incorporate one or more of the present compounds as the semiconductor layer can exhibit high performance in ambient conditions, for example, demonstrating one or more of large charge carrier mobilities, low threshold voltages, and high current on-off ratios. Similarly, other organic semiconductor-based devices such as OPVs, OLETs, and OLEDs can be fabricated efficiently using the organic semiconductor materials described herein.
Applications
- organic semiconductor materials
- electronic, optical, and optoelectronic devices
Advantages
- excellent charge transport characteristics in ambient conditions
- chemical stability
- low-temperature processability
- large solubility in commonsolvents
- processing versatility.
IP Status:
U.S. Patent No. 8,927,971
Chinese Patent No. 201080025032.7
- Country/Region
- USA
