Media.Player

Quasi Van Der Walls Epitaxy Of GaAs on Graphene

Technology Benefits

Cost-effectiveVersatile on any substrateThermal stable buffer layer

Technology Application

Fabrication of optoelectronic devicesIntegration of III-V materials with Si microelectronicsCreate ultra thin nucleation layer of GaAs atop any arbitrary substrate using graphene

Detailed Technology Description

UCLA researchers have developed a novel method to grow a thin uniform continuous layer of GaAs compound on Si with graphene as a buffer layer. Graphene’s thermal properties make it an ideal material for buffer layer. This method can be used in all applications and devices where high quality III-V is required as an oriented or epitaxial layer, which employs graphene to create a physical junction. It can also be used to create ultra thin nucleation layer of GaAs atop any arbitrary substrate using graphene.

Application No.

20170047223

Others

Background

III-V materials typically have direct bandgaps, higher carrier mobility, thus making them suitable candidates for high-speed optoelectronic and electronic devices. The integration of III-V materials with Si microelectronics is a burgeoning field with the goal of achieving high speed and efficient optical devices that can be fabricated at a significant performance and cost advantage using standard semiconductor fabrication technologies.

Related Materials

Additional Technologies by these Inventors

• Relaxed SiGe Films by Surfactant Mediation
• Vertical Gate-Depleted Single Electron Transistors
• Novel Telegraph Signal Microscope For Visualizing Single Atoms And Detecting Defects In Nanotechnology Devices
• Novel Nanomaterial-based Thermo-Photovoltaic Cells
• Graphene Flash Memory Device
• Vertical-Stacked-Array-Transistor (VSAT) for Nonvolatile Memory Devices
• Vsat Structure for Nonvolatile Memory Device
• Epitaxial Growth of Single Crystalline MgO on Germanium
• A Self-Organized Critical CMOS Circuit for Computation and Information Processing
• Anti-Ferromagnetic Magneto-Electric Spin-Orbit Read Logic
• Periodically Rippled Antenna
• Graphene-Polymer Nanocomposite Incorporating Chemically Doped Graphene-Polymer Heterostructure for Flexible and Transparent Conductive Films
• Fabrication Of 1D Sinusoidal Silicon Dioxide Substrate
• Strained Voltage-Controlled Magnetic Memory Elements and Devices

Tech ID/UC Case

29037/2015-456-0

Related Cases

2015-456-0

*Abstract

UCLA researchers in the Department of Electrical Engineering have developed a novel method of Quasi Van der Waals epitaxial growth of GaAs on Si using graphene as a buffer layer.

*IP Issue Date

Feb 16, 2017

*Principal Investigator

Name: Yazeed Alaskar

Department:

Name: Kang Wang

Department:

Country/Region

USA