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Integrated Photodetector/Receiver in a Commercial SiGe BiCMOS Process

Detailed Technology Description

A novel high speed photodetector/receiver was created that is completely integrated in silicon-based commercial logic processes (BiCMOS), and provides higher performance at a lower cost than existing devices.

Others

• Yin, T., Pappu, A. M., Apsel, A. (2006). Low Cost, High Efficiency and High Speed SiGe Phototransistors in Commercial BiCMOS. IEEE Photonics Technology Letters, 18(1), 55-57.

• Patent: 8,062,919

*Abstract

A novel high speed photodetector/receiver was created that is completely integrated in silicon-based commercial logic processes (BiCMOS), and  provides higher performance at a lower cost than existing devices. SiGe phototransistors are constructed from modified SiGe heterojunction bipolar transistors (HBTs) with optical responsivity enhanced by transistor gain and SiGe's relatively shorter absorption depth. The inherent gain allows a boost in responsivity without fabrication of a thick device. Cornell's photodetector/receiver represents the first low-voltage opto-electronic device to demonstrate phototransistor -3dB bandwidth of up to 5.3GHz and quantum efficiencies up to 393% (2.7 A/W).

 

Potential Applications

• Integration of optical interconnects in silicon CMOS
• High-speed, chip-to-chip opto-electronic applications including:
  • Computing systems
  • High-speed communication systems and networks
  • Storage networks
  • Novel light sources, light guides and next-generation modulators

 

Advantages

• Low cost, low noise
• Very high data rates (5.3 GHz)
• Very low voltage requirements (1.8V)
• Fully integrated silicon-based manufacturing process
  • Wafer bonding, wire bonding and other hybrid techniques are not required

*Licensing

Martin Teschlmt439@cornell.edu(607) 254-4454

Country/Region

USA