Use of Cobalt Tungsten Phosphide as a Barrier Material for Copper Metallization
- Detailed Technology Description
- A novel barrier material for encapsulation of copper metallization of integrated circuits
- Others
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Patent: 5,695,810
- *Abstract
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A novel barrier material was developed for encapsulation of copper metallization of integrated circuits. Copper metallization is desirable over conventional aluminum metallization because of its high conductivity and lower susceptibility to electromigration damage. However, the copper must be encapsulated to prevent contamination of adjoining semiconductor and dielectric layers and deterioration of the copper itself due to oxidation. This novel barrier and metallization can be electrolessly deposited on each other without surface preparation. The advantages of this barrier material include improved barrier properties, corrosion resistance, and increased thermal stability.
- *Licensing
- Patrick Govangpjg26@cornell.edu(607) 254-2330
- Country/Region
- USA
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