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Resonant Tunneling Barrier Using C60 for Tunnel Oxide in Flash Memory

Detailed Technology Description
Research at Cornell has recently shown that molecular engineering and the use of C60 in memory applications can greatly improve performance.
Others

Patent application:  20100246269
*Abstract

Research at Cornell has recently shown that molecular engineering and the use of C60 in memory applications can greatly improve performance. While various solutions, including metal nanocrystals, have been proposed for the expansion of flash memory, issues such as run to run reproducibility have prevented wide acceptance. This novel Cornell technology takes advantage of C60's tunable properties and well-defined molecular orbitals to prompt resonant tunneling through SiO2 at high fields. The result is greatly improved nonvolatile memory with a retention to program/erase time ratio more than an order of magnitude better than current solutions. The technology shows great promise as a practical way of expanding memory applications.

       

Potential Applications

  • Nonvolatile memory
  • Hybrid molecular-silicon electronics

            

Advantages

  • Versatile and tailorable tunneling dielectric properties
  • Greatly improved performance in memory applications
*Licensing
Martin Teschlmt439@cornell.edu(607) 254-4454
Country/Region
USA

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