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Measurement of Broad-Band Permeability and Control of Interference Effects

Detailed Technology Description
This invention provides structures and methods to reduce "crosstalk" noise by 10bD in high-speed integrated circuit devices with patterned permalloy layers.
Others

Patent: 7,304,555

*Abstract

This invention provides structures and methods to reduce "crosstalk" noise by 10bD in high-speed integrated circuit devices with patterned permalloy layers.

The methods are compatible with CMOS processing and overcome several limitations present in current interconnect products. The invention includes Ni-Fe films which may be incorporated into planar transmission lines via CMOS-compatible processes. With this innovation, the upper operating frequency of Ni-Fe alloy can be extended into the 20 GHz range while control over ferromagnetic resonance (FMR) and eddy current losses is adequately maintained. Moreover, the invention reduces magnetic field coupling between adjacent transmission lines by about 10 dB. Demonstrated operational frequency range, current carrying capability and magnetic field shielding properties of this invention indicate that it is well-suited for high-speed interconnect applications in CMOS technologies.

*Licensing
Martin Teschlmt439@cornell.edu(607) 254-4454
Country/Region
USA

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