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Three-Dimensional, High Aspect Ratio Micromachining Process

Detailed Technology Description

This invention is a novel process that dramatically improves upon current fabrication methods for micro-electromechanical systems (MEMS).

Others

• Patents: 7,045,466; 7,504,757

• Subramanian, K., Huang, X. T., MacDonald, N. C. (2002) A single crystal silicon 3 dimensional processing technique with applications in large displacement electrostatic actuation Microsystem Technologies, 8 (1), 67-72.

*Abstract

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This invention is a novel process that dramatically improves upon current fabrication methods for micro-electromechanical systems (MEMS). The invention enables the formation of multi-level MEMS geometries without the use of wafer bonding and alignment schemes that can be costly, unreliable, and inappropriate for mass commercial production. The process also enables development of MEMS devices with only a single mask thereby further reducing costs while significantly increasing yields in a production environment.

 

At the core of this technology is an innovative method for oxidizing and etching single crystal silicon. The method comprises the following:

1. A single mask
2. Thermal oxidation
3. Etching techniques such as deep reactive ion etching (RIE), single crystal reactive etching and metallization (SCREAM), and SF6 RIE

 

Potential Applications

• Multi-level MEMS devices
  • Out-of-plane or z-directional features
  • In-plane comb drives
  • Optical switches
  • Mirror display devices
  • Actuators for mechanical, acoustic and electrical probes
  • Microfluidic devices

 

Advantages

• Utilizes a single mask
• Eliminates the need for wafer bonding and alignment schemes
• Reduces costs while significantly increasing yields

*Licensing

Patrick Govangpjg26@cornell.edu(607) 254-2330

Country/Region

USA