High-Performance Monolithically-Integrated JFETS
- Detailed Technology Description
- A design and method is described for making Junction FETS that are monolithically integrated in NEMS or MEMS devices for enhanced signal transduction and signal processing.
- Others
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- Patents: 9,159,710; CN103430308A
- Amponsah, K.; Lal, A., "Monolithically integrated junction FETS and NEMS," Micro Electro Mechanical Systems (MEMS),2011 IEEE 24th International Conference on , vol., no., pp.91-94, 23-27Jan. 2011.
- *Abstract
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A design and method is described for making Junction FETS that are monolithically integrated in NEMS or MEMS devices for enhanced signal transduction and signal processing. Monolithic integration is preferred to the commonly-used hybrid integration because it addresses the limitations of parasitics and mismatches that prevent the hybrid process from fully realizing the highest performance.
Potential Commercial Applications:
- Used with MEMS or NEMS devices, such as accelerometers, gyroscopes, switches, microfluidic devices, etc.
Advantages:
- Increases signal to noise ratio, enabling high quality signals
- Reduces assembly and packaging cost
- *Licensing
- Patrick Govangpjg26@cornell.edu(607) 254-2330
- Country/Region
- USA
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