Epitaxial Laser Integration on Silicon Based Substrates
- Technology Benefits
- Cost reduction Lower threshold currentsIncreased temperature stability of lasing threshold Longer lifetimes
- Technology Application
- Silicon photonics
- Detailed Technology Description
- Researchers at the University of California, Santa Barbara have created a low-cost, highly scalable approach to integrating a compound-semiconductor laser or light source with silicon-photonic circuitry. The present invention discloses a silicon-photonic integrated circuit comprising a compound-semiconductor-based quantum-dot laser structure that is epitaxially grown on an indirect-bandgap substrate comprising a surface waveguide. The present invention provides an enabling technology for the low-cost manufacture of efficient lasers on silicon, as well as their optical coupling to silicon-based waveguides.
- Application No.
- WO2017210300
- Others
-
Background
There has been an increased interest in silicon photonics as it has various applications. These applications include, but are not limited to, data center interconnects, sensing, high performance computing, and space-based communications. Unfortunately, the development of silicon-photonic integrated circuits is complicated. The desirability, scalability, and commercial success of conventional approaches for integrating compound semiconductor devices and silicon-based integrated-optics substrates has been limited by the high cost of compound-semiconductor substrates as compared to silicon-based substrates, as well as the incurrence of extra processing steps and processing complexity associated with the integration. As a result, there remains a need for a simple, low-cost approach to integrating compound-semiconductor devices and silicon-based integrated-optics substrates to form practical, commercially viable silicon-photonics systems.
Additional Technologies by these Inventors
- Fused Vertical Couplers
- Loss Modulated Silicon Evanescent Lasers
- Ring Resonator-Based Optical Isolator and Circulator
- Integrated Dielectric Waveguide and Semiconductor Layer
- Integrated Bidirectional Optical Amplifier (BOA) for Optical Interconnects
- Erbium Modified III-V Semiconductors as Photoconductors in the Terahertz Region
- Integrated Reconfigurable Circulator
- Advanced Tunable Long-Wavelength Vertical-Cavity Semiconductor Optical Amplifiers
- Orthogonal Mode Laser Gyro
- Unipolar Light Emitting Devices On Silicon Based Substrates
- A Hybrid Silicon Laser-Quantum Well Intermixing Wafer Bonded Integration Platform
- Quantum Dot Photonic Integrated Circuits
- Misfit Dislocation Free Quantum Dot Lasers
Tech ID/UC Case
27119/2016-912-0
Related Cases
2016-912-0
- *Abstract
-
A low-cost, highly scalable approach to integrating a compound-semiconductor laser or light source with silicon-photonic circuitry.
- *IP Issue Date
- Dec 7, 2017
- *Principal Investigator
-
Name: John Bowers
Department:
Name: Arthur Gossard
Department:
Name: Alan Liu
Department:
Name: Justin Norman
Department:
- Country/Region
- USA
