AsiaIPEX
Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
Technology Benefits
Low alkali-metal diffusionImproved device performance
Technology Application
LEDs and Laser DiodesHigh Electron Mobility Transistors (HEMTs)Power switching devices
Detailed Technology Description
Researchers at the University of California, Santa Barbara have developed a method to produce hexagonal würtzite type epitaxial layers possessing low alkali-metal concentration. While incorporation of alkali-metals is essential to the growth process, they have a negative impact on device properties. We have found that the diffusion of alkali-metals into the epitaxial layer strongly depends on the crystal plane of the substrate and therefore can be effectively suppressed. This method produces bow-free GaN substrates containing low structural defect densities in a cost effective manner, allowing manufacturers of both devices and substrates to benefit.
Application No.
8647967
Others
Background
A high-quality substrate is essential for fabrication of GaN devices, which has led to various approaches for growing GaN single crystal substrates. In most approaches, alkali-metals are added to the growth system, causing the grown GaN crystals to contain high concentrations of alkali-metals. This high concentration of alkali metals severely increases the likelihood that alkali-metals will diffuse into the epitaxial layers, having a negative impact on the electrical properties and performance of devices.
Additional Technologies by these Inventors
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Lasers via Patterning of Photonic Crystals Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure Phosphor-Free White Light Source Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate High Efficiency LED with Optimized Photonic Crystal Extractor Packaging Technique for the Fabrication of Polarized Light Emitting Diodes LED Device Structures with Minimized Light Re-Absorption (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance Oxyfluoride Phosphors for Use in White Light LEDs III-V Nitride Device Structures on Patterned Substrates Growth of Semipolar III-V Nitride Films with Lower Defect Density Improved GaN Substrates Prepared with Ammonothermal Growth Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance Photoelectrochemical Etching Of P-Type Semiconductor 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Semipolar Subtrates Improved Anisotropic Strain Control in Semipolar Nitride Devices III-Nitride Tunnel Junction with Modified Interface Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide Increased Light Extraction with Multistep Deposition of ZnO on GaN Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices Calcium Impurity Reduction for Improved Light-Emitting Devices Contact Architectures for Tunnel Junction Devices New Blue Phosphor for High Heat Applications Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals Methods for Fabricating III-Nitride Tunnel Junction Devices Multifaceted III-Nitride Surface-Emitting Laser Laser Diode System For Horticultural Lighting Fabricating Nitride Layers Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation Laser Lighting System Incorporating an Additional Scattered Laser Tech ID/UC Case
23657/2008-658-0
Related Cases
2008-658-0
Country/Region
USA
