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Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
Technology Benefits
Reduced defect density in semipolar nitride films Can be performed multiple times to further decrease dislocation density
Technology Application
Growth of semipolar nitride films This technology is available for a non-exclusive license. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.
Detailed Technology Description
Researchers at the University of California, Santa Barbara have developed a novel method for defect reduction via lateral growth of semipolar nitrides. Lateral growth can be used to reduce defect density in semipolar nitride films by such growth techniques as LEO, SLEO, cantilever epitaxy, and nanomasking. The lateral growth can also be performed multiple times to further decrease the dislocation density.
Supplementary Information
Patent Number: US8148244B2 Application Number: US2006486224A Inventor: Baker, Troy J. | Haskell, Benjamin A. | Speck, James S. | Nakamura, Shuji Priority Date: 13 Jul 2005 Priority Number: US8148244B2 Application Date: 13 Jul 2006 Publication Date: 3 Apr 2012 IPC Current: H01L002120 | H01L002136 US Class: 438481 | 257E21133 Assignee Applicant: The Regents of the University of California | Japan Science and Technology Agency Title: Lateral growth method for defect reduction of semipolar nitride films Usefulness: Lateral growth method for defect reduction of semipolar nitride films Summary: For reducing defects in semipolar nitrides films in fabrication of devices (claimed), particularly semiconductor films. Novelty: Reducing defect for semipolar nitride film useful e.g. in semiconductor films involves performing lateral growth of semipolar nitride over mask or gaps to reduce defect density in the semipolar nitride
As bulk GaN crystals are not widely available, current devices are grown on foreign substrates heteroepitaxially. The nature of heteroepitaxial growth leads to significant defect densities, most prominently in the form of threading dislocations. Researchers are continually trying to reduce defect density. In c-plane nitride growth, as well as other semiconductor materials systems, the threading dislocation defects predominantly propagate along the principal growth direction. As such, laterally growing polar and nonpolar nitrides tend to exhibit reduced defect densities.
