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Improved Manufacturing of Semiconductor Lasers

Technology Benefits

Improved performance of the laserImproved contact structures and reduced waveguiding loss by contact electrodes

Technology Application

fiber optic networksInstrumentation lasersOptical spectroscopy    This technology is available for licensing.

Detailed Technology Description

Researchers at UCSB have developed a method of fabricating solid state lasers with embedded structures for improved performance via patterning. The patterned layer(s) may be engineered to act as a mirror, optical confinement layer, grating, wavelength selective element, beam shaping element, etc. for the active layers. The key advantage of this improvement is that it places the photonic crystal layer above the active layer for better performance. Conventional approaches place the photonic crystal layer below the active layer.

Supplementary Information

Patent Number: US7768024B2
Application Number: US2006633148A
Inventor: Weisbuch, Claude C. A. | Nakamura, Shuji
Priority Date: 2 Dec 2005
Priority Number: US7768024B2
Application Date: 4 Dec 2006
Publication Date: 3 Aug 2010
IPC Current: H01L002906
US Class: 257098 | 257013 | 257079 | 257435 | 257436 | 257E33067 | 257E51021 | 438029 | 438031 | 438032
Assignee Applicant: The Regents of the University of California
Title: Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth
Usefulness: Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth
Summary: Used as a horizontal emitting, vertical emitting, beam shaped, distributed feedback laser.
Novelty: Horizontal emitting, vertical emitting, beam shaped, distributed feedback laser includes patterned layers comprising lateral epitaxial overgrowth nitride layers filling holes in respective bottom and top mask layers, and active layer(s)

Industry

Optics

Sub Category

LED/OLED

Application No.

7768024

Others

Background

There is a need to improve the performance of horizontal emitting, vertical emitting, beam shaped and distributed feedback lasers. Traditionally, photonic crystals placed on the surface of the devices have been used to improve performance.

Related Technologies

• Mirrorless LED With High Luminous Efficiency

Additional Technologies by these Inventors

• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• GaN-Based Thermoelectric Device for Micro-Power Generation
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Method for Growing High-Quality Group III-Nitride Crystals
• Growth of Planar Semi-Polar Gallium Nitride
• Photonic Structures for Efficient Light Extraction and Conversion in Multi-Color LEDs
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
• Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
• Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
• Phosphor-Free White Light Source
• Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
• High Efficiency LED with Optimized Photonic Crystal Extractor
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• LED Device Structures with Minimized Light Re-Absorption
• III-V Nitride Device Structures on Patterned Substrates
• Growth of Semipolar III-V Nitride Films with Lower Defect Density
• Improved GaN Substrates Prepared with Ammonothermal Growth
• Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
• Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
• Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
• Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
• Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
• Method for Manufacturing Improved III-Nitride LEDs and Laser Diodes: Monolithic Integration of Optically Pumped and Electrically Injected III-Nitride LEDs
• Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
• Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
• Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
• High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-150)
• Nonpolar III-Nitride LEDs With Long Wavelength Emission
• Method for Increasing GaN Substrate Area in Nitride Devices
• Flexible Arrays of MicroLEDs using the Photoelectrochemical (PEC) Liftoff Technique
• Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
• UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
• Low-Droop LED Structure on GaN Semi-polar Substrates
• Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
• Growth of High-Performance M-plane GaN Optical Devices
• Method for Enhancing Growth of Semipolar Nitride Devices
• Transparent Mirrorless (TML) LEDs
• Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
• Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates
• High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
• High Light Extraction Efficiency III-Nitride LED
• Tunable White Light Based on Polarization-Sensitive LEDs
• Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
• Improved Anisotropic Strain Control in Semipolar Nitride Devices
• III-Nitride Tunnel Junction with Modified Interface
• Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
• Contact Architectures for Tunnel Junction Devices
• Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals
• Methods for Fabricating III-Nitride Tunnel Junction Devices
• Multifaceted III-Nitride Surface-Emitting Laser
• Laser Diode System For Horticultural Lighting
• Fabricating Nitride Layers
• Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
• Laser Lighting System Incorporating an Additional Scattered Laser

Tech ID/UC Case

18968/2005-721-0

Related Cases

2005-721-0, 2007-113-2, 2007-114-2, 2007-163-2, 2007-272-2, 2007-281-2, 2005-144-2, 2005-144-0

*Abstract

A method of fabricating solid state lasers with embedded structures for improved performance via patterning.

*IP Issue Date

Aug 3, 2010

*Principal Investigator

Name: Shuji Nakamura

Department:

Name: Claude Weisbuch

Department:

Country/Region

USA