AsiaIPEX is a one-stop-shop for players in the IP industry, facilitating IP trade and connection to the IP world. Whether you are a patent owner interested in selling your IP, or a manufacturer looking to buy technologies to upgrade your operation, you will find the portal a useful resource.
Novel Quantum Dot Field-Effect Transistors Free of the Bias-Stress Effect
Detailed Technology Description
When a quantum dot (QD) field-effect transistor (FET) is turned on in n-channel or p-channel mode, the established drain-source current rapidly decreases from its initial magnitude in a stretched exponential decay, resulting in the bias-stress effect. This instability associated with bias-stress precludes technological applications of QD FETs, e.g., in flexible displays or chemical sensing. Researchers at the University of California, Irvine have developed novel QD FETs that eliminate this instability thus allowing the use of QD FETs in displays for TVs, tablet, phones, and more.
Application No.
20160181407
Others
Tech ID/UC Case 24860/2015-323-0 Related Cases 2015-323-0
Country/Region
USA
For more information, please click Here
