Novel Quantum Dot Field-Effect Transistors Free of the Bias-Stress Effect
- Detailed Technology Description
- When a quantum dot (QD) field-effect transistor (FET) is turned on in n-channel or p-channel mode, the established drain-source current rapidly decreases from its initial magnitude in a stretched exponential decay, resulting in the bias-stress effect. This instability associated with bias-stress precludes technological applications of QD FETs, e.g., in flexible displays or chemical sensing. Researchers at the University of California, Irvine have developed novel QD FETs that eliminate this instability thus allowing the use of QD FETs in displays for TVs, tablet, phones, and more.
- Application No.
- 20160181407
- Others
-
Tech ID/UC Case
24860/2015-323-0
Related Cases
2015-323-0
- *Abstract
-
Novel quantum dot field-effect transistors without bias-stress effect that also have high mobility and are environmentally stable.
- *IP Issue Date
- Jun 23, 2016
- *Principal Investigator
-
Name: Matthew Law
Department:
Name: Jason Tolentino
Department:
- Country/Region
- USA
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