High-Isolation Tunable MEMS Capacitive Switch
- Technology Application
- The design is useful for smart antenna systems, variable capacitors, on-chip inductors, tunable filters, and tunable RF matching circuits.
- Detailed Technology Description
- University researchers have developed a high isolation switch capable of obtaining C-band frequencies, without the need for changes in current process, and with minimum modifications is current switch designs.
- Supplementary Information
- Patent Number: US7265647B2
Application Number: US200580112A
Inventor: Qian, Jiangyuan | Chang, Hung Pin | Cetiner, Bedri A. | Bachman, Mark | DeFlaviis, Franco | Li, Guann Pyng
Priority Date: 12 Mar 2004
Priority Number: US7265647B2
Application Date: 14 Mar 2005
Publication Date: 4 Sep 2007
IPC Current: H01P000110 | B81B000500 | H01H005900
US Class: 333262 | 333105
Assignee Applicant: The Regents of the University of California
Title: High isolation tunable MEMS capacitive switch
Usefulness: High isolation tunable MEMS capacitive switch
Summary: Used for RF MEMS switch (claimed) used as basic building block for construction of RF components and sub-systems e.g. variable capacitors, phase shifters, tunable RF matching circuits/filters, and reconfigurable antennas.
Novelty: RF MEMS switch manufacturing method, involves suspending deflectable unit between electrodes and over insulator layer to cover portions of electrode and insulator layer
- Industry
- Electronics
- Sub Category
- Semiconductor
- Application No.
- 7265647
- Others
-
Tech ID/UC Case
18864/2003-361-0
Related Cases
2003-361-0
- *Abstract
-
For a typical MEMS switch, the resonant frequency is around 20 to 30 GHz which can not be employed by commercial wireless systems operating at a frequency band of 2 to 8 GHz. This resonant frequency can be tuned by changing the inductance of the switch membrane. When inductance is increased, the resonant frequency is moved to a lower frequency band at which location, high isolation is achieved. There have been many published solutions to this problem but it has been found to be difficult to further lower the resonant frequency to C-band levels due to the unrealistically large inductance required.
- *IP Issue Date
- Sep 4, 2007
- *Principal Investigator
-
Name: Mark Bachman
Department:
Name: Bedri Cetiner
Department:
Name: Hung-ping Chang
Department:
Name: Franco De Flaviis
Department:
Name: Guann Pyng Li
Department:
Name: Jiangyuan(Y.J.) Qian
Department:
- Country/Region
- USA
