Method Of Selective Synthesis Of Nanomaterials
- Technology Benefits
- Localized, selective and scalableOccurs at room-temperatureEliminates post-synthesis assembly of nanostructures
- Technology Application
- The integration of nanostructures with larger-scale systems.
- Detailed Technology Description
- None
- Supplementary Information
- Patent Number: US7311776B2
Application Number: US200427749A
Inventor: Lin, Liwei | Englander, Ongi | Christensen, Dane
Priority Date: 30 Dec 2003
Priority Number: US7311776B2
Application Date: 29 Dec 2004
Publication Date: 25 Dec 2007
IPC Current: C30B001912 | C01B003102 | C01B003302 | C23C001602 | C23C001624 | C23C001626 | C23C001644 | H01L002120 | H01L002900 | H01L005100
US Class: 117087 | 117088 | 117095
Assignee Applicant: The Regents of the University of California
Title: Localized synthesis and self-assembly of nanostructures
Usefulness: Localized synthesis and self-assembly of nanostructures
Summary: For synthesizing nano-structure e.g. nano-tube and nano-wires for integrated circuit (claimed).
Novelty: Nano-structure synthesis e.g. for carbon nano-tube involves passing current to micro-structure through resistive element deposited with catalyst to initiate and sustain nano-structure growth
- Industry
- Electronics
- Sub Category
- Circuit Design
- Application No.
- 7311776
- Others
-
Tech ID/UC Case
17323/2004-016-0
Related Cases
2004-016-0
- *Abstract
-
The unique electrical, mechanical and optical properties of nanowires and nanotubes makes them attractive in a variety of applications. However, a significant obstacle to the application of these nanostructures is the difficulty in handling, maneuvering and integrating them with microelectronics to form a complete system. In particular, current synthesis processes for silicon nanowires and carbon nanotubes require high temperatures that can damage the microelectronics on which the nanostructures are being synthesized.
To solve these problems, researchers at the University of California, Berkeley have developed a process for synthesizing nanostructures at a specified location inside a room-temperature chamber. This localized selective synthesis process can directly integrate either silicon nanowires or carbon nanotubes with larger-scale systems, such as foundry-based microelectronics, and it eliminates the need for subsequent assembly processes.
This innovative approach is based on localized resistive heating of suspended microstructures to activate vapor-deposition synthesis, and it yields either silicon nanowires or carbon nanotubes. The process has synthesized nanowires that grow at 1 ?m/min, are 30-80 nm in diameter, and up to 10 ?m in length; and the process has synthesized nanotubes that grow at 0.25 ?m/min, are 10-50 nm in diameter and up to 5 ?m in length.
- *IP Issue Date
- Dec 25, 2007
- *Principal Investigator
-
Name: Dane Christensen
Department:
Name: Ongi Englander
Department:
Name: Liwei Lin
Department:
- Country/Region
- USA
