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HIGHLY PLASMA ETCH-RESISTANT PHOTORESIST COMPOSITION CONTAINING A PHOTOSENSITIVE POLYMERIC TITANIA PRECURSOR

IP Title

HIGHLY PLASMA ETCH-RESISTANT PHOTORESIST COMPOSITION CONTAINING A PHOTOSENSITIVE POLYMERIC TITANIA PRECURSOR

Detailed Technology Description

None

Supplementary Information

Patent Number: US6303270B1
Application Number: US1999259229A
Inventor: Flaim, Tony D. | Guerrero, Douglas J. | Fowler, Michelle R. | James, William J. | Petrovsky, Vladimir | Anderson, Harlan U.
Priority Date: 1 Mar 1999
Priority Number: US6303270B1
Application Date: 1 Mar 1999
Publication Date: 16 Oct 2001
IPC Current: C08G007900 | G03F0007004 | G03F0007038
US Class: 4302841 | 4302851 | 4302871 | 430311 | 525389 | 528220 | 528395
Assignee Applicant: The Curators of the University of Missouri,Rolla | Brewer Science Inc,Rolla
Title: Highly plasma etch-resistant photoresist composition containing a photosensitive polymeric titania precursor
Usefulness: Highly plasma etch-resistant photoresist composition containing a photosensitive polymeric titania precursor
Summary: For defining patterns on substrates, especially as a photoresist composition for microlithographic applications.
Novelty: Plasma etch-resistant photoresist composition for defining patterns on substrates, especially in microlithographic applications, contains organotitanium (co)polymer reaction product, photopolymerization initiator and solvent

Industry

Chemical/Material

Sub Category

Chemical/Material Application

Application Date

Mar 1, 1999

Application No.

6,303,270

Others

*Abstract

Abstract of US Patent 6,303,270 - Highly plasma etch-resistant photoresist composition containing a photosensitive polymeric titania precursor: A composition is derived from an addition polymerizable organotitanium polymer which upon exposure to an oxygen plasma or baking in air, is converted to titanium dioxide (titania) or is converted to a mixed, titanium-containing metal oxide. The metal oxide formed in situ imparts etch-resistant action to a patterned photoresist layer. The composition may also be directly deposited and patterned into permanent metal oxide device features by a photolithographic process.Non-Confidential Abstract of Invention: This invention relates to light-sensitive compositions useful for defining patterns on substrates by photolithography. The new photoresist composition is especially useful in microlithographic applications where it is desirable to form microscopically-sized patterns which exhibit exceptional resistance to plasma etching. The composition is derived from a photosensitive organotitanium polymer which upon exposure to an oxygen plasma or baking in air is converted to titanium dioxide (titania) or a mixed, titanium-containing metal oxide. The in situ-formed metal oxide imparts the etch-resistant action to the patterned photoresist layer. The new photoresist may also be used to directly deposit permanent metal oxide device features by a photolithographic process.

*IP Issue Date

Oct 16, 2001

*Principal Investigator

Name: Vladimir Petrovsky, Sr. Research Specialist

Department:

Name: WILLIAM JAMES

Department:

Name: Harlan Anderson, Curator's Professor Emeritus of Ceramic Engineering

Department:

Name: Tony Flaim

Department:

Name: Douglas Guerrero

Department:

Name: Michelle Fowler

Department:

Country/Region

USA