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More Efficient, Cost-Effective Semiconductor Devices

IP Title

GRAPHITE AND/OR GRAPHENE SEMICONDUCTOR DEVICES (DIV of 13292)

Detailed Technology Description

None

Application Date

Oct 27, 2014

Application No.

9,362,365

Others

*Abstract

Invention

These state-of-the-art, cost-effective semiconductor devices feature superior stability for high-temperature, high-power and high-frequency applications. Traditional metal-semiconductor (M-S) interfaces are the main components of MESFETs, HEMTs, OFETs and LEDs. However, since conventional M-S junctions deteriorate at high temperatures, the above-mentioned devices can become non-functional due to local overheating effects and are limited in high-temperature applications. Moreover regular M-S interfaces yield fixed barrier heights at the M-S interface.

Researchers at the University of Florida have created graphene-, bilayer graphene-, multi-layer graphene-, or graphite-based semimetal/semiconductor devices capable of unrivaled device efficiency at lower costs to manufacturers. These junctions are able to operate under extreme temperature conditions because of their chemical stability and support engineering device properties by simple chemical doping. These carbon-based devices will apply to a wide range of electrical, thermal, photovoltaic, and sensing devices and will offer unprecedented control over electrical properties. Their tunable electrical characteristics support flexible design strategies for attractive savings.

Applications

A new generation of electronic devices and sensors that enhance the efficiency of MESFETs, HEMTs, OFETs, LEDs and MOSFETs

Advantages

• Barrier heights at the carbon-semiconductor interfaces can be adjusted (by chemical doping) as desired depending on the application, thereby giving companies opportunities to change the operating parameters/properties of devices
• Higher or lower barrier heights allowing for an exponential decrease or increase, respectively, in current for fixed voltages and increased device efficiency
• Stability at high temperatures allows GaAs-, SiC- and GaN-based MESFET and HEMT devices to operate for longer periods of time without overheating or degrading, decreasing replacement costs
• Reduces heating effects, decreasing energy losses and improving product quality
• Fabricates using carbon-based materials, utilizing the simple, non-destructive, efficient, inexpensive, and abundant supply
• Applies to devices with electrical, mechanical, or thermal properties, making it profitable across a broad range of products

Technology

The proposed semiconductor devices can withstand extreme conditions without device degradation; their physical properties can easily adjust without damaging the interface during the growth/deposition process, leading to higher operation temperatures, better efficiency and stability, and less power consumption at constant voltage. While traditional M-S interfaces have fixed barrier heights, the barrier height of these interfaces can adjust based on the choice of metals grown onto the semiconductor. This is the main factor in determining device characteristics, efficiency, speed, and durability. These carbon/semiconductor junctions are able to decrease unnecessary losses and increase efficiency and operation temperatures for use in detectors, sensors, photovoltaics, and components of various field-effect transistor devices.

Related to 13292

*IP Issue Date

Jun 7, 2016

*IP Publication Date

Feb 26, 2015

*Principal Investigator

Name: Arthur Hebard

Department:

Name: Sefaattin Tongay

Department:

Country/Region

USA