Controlling Growth Rates And Compositions Of Films
- Detailed Technology Description
- Developed at McGillUniversity, this technology describes a novel method and apparatus forcontrolling the growth of epitaxial films. In particular this can be applied toMolecular Beam Epitaxial (MBE) systems. These systems were developed at BellLabs in the late 1960s to grow crystalline films on substrates. MBE systems arewidely used for growing compound semiconductors such as gallium arsenide,indium phosphide, nitrides, silicongermanium and silicon carbide and the resulting devices are used inapplications such as opto-electronics andmonolithic microwave circuits. MBE systems require high vacuum environments toenable the molecules traveling within to migrate in straight lines and enableatomic-level deposition. The source of the material for the films is usuallyhoused in effusion cells which generally have valves or shutters that open andshut. Controlling the deposition rate and thus the composition requires theadjustment of the temperature of the effusion cell. However this approach isnot instantaneous and in an attempt to increase the rate of change of the flowrate, MBE systems have been equipped with multiple effusion cells of the samematerial to better control the deposition. This costly and still limitedapproach is helpful but is incomplete.
- *Abstract
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- Country/Region
- USA
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