Lateral growth of high quality semiconductor thin film
- Detailed Technology Description
- Technologyhas been developed to enable lateral growth of high-quality crystalline semiconductors films onsubstrates or other epitaxially grown layers wherethe underlying substrate or layer have a high degree of lattice mismatch.Currently most epitaxial semiconductor films are grown vertically. To integratelattice mismatch materials, materials are either directly bonded or a thickgraded buffer is used in order to reduce threading dislocations, and reducestresses and cracking. This is made possible using metal-catalyzed semiconductor growth which limits nucleation andgrowth to a specific, predefinedlocation where the catalyst ispresent. The techniques whichcan be adapted to various semiconductor manufacturing processes also preventsthe formation of grain boundaries. Consequently a wide range of devices such asphoto-voltaics, solid statelighting, high speed microelectronics and opto-electronicswould benefit from having large amorphous substrates with single crystallinesemiconductors films.
- *Abstract
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- Country/Region
- USA
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