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Integrated Etched Multilayer Grating-based Wavelength Demultiplexer
Detailed Technology Description
A novel very shallow etched-grating structure is proposed as a wavelength multiplexer/demultiplexer. Two possible configurations for the Silicon-On-Insulator (SOI) structure are available. Device fabrication using single-step-etched e-beam lithography in Silicon-On-Insulator is targeted. This device represents an alternative to conventional integrated etched grating demultiplexers/spectrometers using a deep etched total internal reflection based grating or to arrayed waveguide demultiplexer structures. The proposed device is easy to fabricate, versatile, adaptable and compatible with next generation silicon photonics components.
Country/Region
USA
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