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Enhancing the width of polycrystalline grains using a particulate mask and continuous motion sequential lateral solidification

Summary

In the field of semiconductor processing, there have been several attempts to use lasers to convert thin amorphous silicon films into polycrystalline films. However, the polycrystalline grains generated by these processes are typically small and of non-uniform size with random microstructure. This method combines a sequence of laser pulses and a particulate mask to controllably and sequentially generate uniform large polycrystalline grains with controlled grain boundary locations. This technology could be utilized for the development of polycrystalline thin film semiconductors for use in higher quality electronic devices, such as flat panel displays.

Technology Benefits

Controls the width of grains perpendicular to the direction of primary crystallizationProvides well-defined crystallographic orientationsProduces large polycrystalline grains with controlled grain boundary locationsResults in higher quality polycrystalline siliconCan be used on a variety of materialsPatent Information:U.S. Patent Issued (US 8,859,436) Tech Ventures Reference: M02-065

Technology Application

SemiconductorsThin film transistors High quality electronic devicesFlat panel displays

Detailed Technology Description

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*Abstract

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*Inquiry

Greg MaskelColumbia Technology VenturesTel: (212) 854-8444Email: TechTransfer@columbia.edu

*IR

M02-065

*Principal Investigator

*Publications

Crowder MA, Sposili RS, Limanov AB, Im JS. "Sequential lateral solidification of PECVD and sputter deposited a-Si films" MRS Spring Meeting. 2000;621. Crowder MA, Carey PG, Smith PM, Sposoli RS, Cho HS, Im JS. "Low-temperature single-crystal Si TFTs fabricated on Si films processed via sequential lateral solidification" Electron Device Letters, IEEE 1998 Aug;19(8):306-8.

Country/Region

USA