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Stacked-transistor power amplifiers for high-power radio frequency and millimeter-wave wireless applications

Summary: This technology is an integrated circuit design for a stacked-transistor power amplifier (PA) that delivers the high output power required of wireless transmitters while maintaining ideal Class-E efficiency.

Technology Benefits: Achieves high output powers with ideal Class E behavior and efficiencyEnables high-efficiency, high-power PAs in both CMOS and III-V materialsIdeal class E behavior and efficienciesImproved efficiencies and output power for III-V PAs

Technology Application: Energy-constrained RF and millimeter-wave transmitters for wireless devices, including cellular phones, wireless LAN, millimeter-wave vehicular radar, and 60 GHz wireless personal area networks (WPANs)High-efficiency, high-power PAs in CMOS technology enabling monolithic integration of the PA with the rest of the transmitterImproved efficiencies and output power for III-V PAsTech Ventures Reference:IR M11-082Licensing Contact: Greg Maskel

Detailed Technology Description: None

*Abstract: None

*Inquiry: Greg MaskelColumbia Technology VenturesTel: (212) 854-8444Email: TechTransfer@columbia.edu

*IR: M11-082

*Principal Investigator

Country/Region: USA

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