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Large grain silicon thin films produced by excimer laser annealing

Summary

Polycrystalline silicon thin film transistors used in active matrix liquid crystal display devices are produced by melting and recrystallization of amorphous silicon. However, the boundaries between silicon crystal grains created during annealing reduce electron mobility, thereby increasing electrical resistance and reducing efficiency. This technology uses an excimer laser annealing method with multiple laser tubes to increase silicon crystal grain size. The larger grain sizes increase electron mobility, improve the performance of silicon thin film transistors, and enable the production of higher quality displays in electronic devices.

Technology Benefits

Produces higher energy density than possible with a single laserProduces large grain silicon thin films transistors for high performance displaysReduces silicon thin film electrical resistanceIncreases silicon thin film electron mobility Patent Information:Patent Pending Tech Ventures Reference: IR CU14160

Technology Application

Thin film transistors for active matrix liquid crystal displays in flat panel consumer electronics, such as televisions, computer monitors, and mobile devices Semiconductor and transistor fabrication

Detailed Technology Description

None

Country/Region

USA

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