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Semiconductor thin film crystallization with decreased edge effects

Summary: James S. Im, Ph.D.

Technology Benefits: Provides a smooth visual transition between pixelsDoes not require additional manufacturing timeCan be used with two or more consecutive laser pulsesPatent information:Patent Issued (US 7300858)Patent Issued (US 7259081)Patent Issued (US 8476144)Tech Ventures Reference: IR M02-061

Technology Application: Thin film transistor (TFT) manufacturingLiquid crystal display (LCD) manufacturingImage sensorsReduced power integrated circuits

Detailed Technology Description: James S. Im, Ph.D.

*Abstract: None

*Inquiry: Jim AloiseColumbia Technology VenturesTel: (212) 854-8444Email: TechTransfer@columbia.edu

*IR: M02-061

*Principal Investigator

*Publications: Sposili, Robert, Im, James S. "Sequential lateral solidification of thin silicon films on SiO2. 1996 Nov 4; 69(19):2864-2866.

*Web Links: Patent number: CN1685474Patent: Issued Patent

Country/Region: USA

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