Complete crystallization of a thin film with a single laser scan
- Summary
- Crystallization of semiconductor thin films is used in the manufacture of many devices, including thin film transistors, image sensors, and liquid crystal displays. Methods such as sequential lateral solidification (SLS) use laser irradiation to fabricate high quality polycrystalline films with large, uniform crystal grains. However, the many iterative steps of irradiation and translation required impede high-throughput production. By providing methods that allow translation of both the film and the laser during irradiation, this technology allows complete crystallization of a thin film with a single scan.
- Technology Benefits
- Decreases required time for surface processingAvoids the need for multiple scansProvides crystals elongated beyond normal lateral growth sizeImproves overall crystalline properties of the filmPatent Information:Patent Issued (US 8,445,365)Tech Ventures Reference: IR M03-050
- Technology Application
- Manufacture of liquid crystal displaysManufacture of thin film transistorsManufacture of 3D integrated circuitsStreamlined patterning of thin films
- Detailed Technology Description
- None
- *Abstract
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None
- *Inquiry
- Greg MaskelColumbia Technology VenturesTel: (212) 854-8444Email: TechTransfer@columbia.edu
- *IR
- M03-050
- *Principal Investigator
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- *Web Links
- Patent number: WO2005029551
- Country/Region
- USA
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