Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification.
- Summary
- Lead Inventors: James S. ImMethods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are described.The method involves generating a sequence of excimer laser pulses which is homogenized in a predetermined plane. The homogenized laser pulse is masked with a two dimensional pattern of substantially opaque dots to generate a dot patterned beamlets. An amorphous silicon thin film sample is irradiated to effect melting. The amorphous silicon thin film sample is processed into a polycrystalline silicon thin film.Manufacturing techniques which generate larger and uniformly microstructured polycrystalline silicon thin films to be used in the fabrication of high quality devices are provided.
- Detailed Technology Description
- Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are described.The method involves generating a sequence of excimer laser pulses which is homogenized in a predetermined plane. The homogenized...
- *Abstract
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- *Inquiry
- Jim Aloise Columbia Technology Ventures Tel: (212) 854-8444 Email: TechTransfer@columbia.edu
- *IR
- MS99/04/26B
- *Principal Investigator
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- *Web Links
- Patent number: US20030096489
- Country/Region
- USA
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