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Femto-Joule Atomic Scale Reversible Switch

Detailed Technology Description
A device that incorporates teachings of the present disclosure may include, for example, a memory array having a first array of nanotubes, a second array of nanotubes, and a resistive change material located between the first and second array of nanotubes.
Countries
Not Available
Application No.
None
*Abstract

A device that incorporates teachings of the present disclosure may include, for example, a memory array having a first array of nanotubes, a second array of nanotubes, and a resistive change material located between the first and second array of nanotubes. Other embodiments are disclosed.


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*IP Issue Date
None
*IP Type
Other Patent
Country/Region
USA

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