Pseudomorphic Heterojunction Bipolar Transistor (PHBT) for THz Operation
- Detailed Technology Description
- A method for making a heterojunction bipolar transistor.
- Countries
- United States
- Application No.
- 7297589
- *Abstract
-
A method for making a heterojunction bipolar transistor includes the following steps: forming a heterojunction bipolar transistor by depositing, on a substrate, subcollector, collector, base, and emitter regions of semiconductor material; the step of depositing the subcollector region including depositing a material composition transition from a relatively larger bandgap material nearer the substrate to a relatively smaller bandgap material adjacent the collector; and the step of depositing the collector region including depositing a material composition transition from a relatively smaller bandgap material adjacent the subcollector to a relatively larger bandgap material adjacent the base.
For more information about this technology, please contact the University of Illinois at Urbana-Champaign Office of Technology Management at otm@illinois.edu.
- *IP Issue Date
- None
- *IP Type
- Utility
- Country/Region
- USA
