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Re-programmable Switching Cells for Field Programmable Gate Arrays

Detailed Technology Description: None

*Abstract: None

*Inquiry: Andy Gapin, agapin@rice.edu, (713) 348-6272

*Web Links: “Etching-dependentreproducible memory switching in vertical SiO2 structures,” JunYao, Lin Zhong, Douglas Natelson and James M. Tour, AppliedPhysics Letters, 93, 253101 (2008).

Country/Region: USA

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