A New E-Field Writable Magnetic Random Access Memory Based on Multiferroics
- Technology Benefits
- Value PropositionThe E-Field MRAM:ΓÇóIs highly compact, light weight and faster as compared to conventional MRAMs.ΓÇóInvolves the use of a strong magneto-electric coupling to enable electric field induced magnetic switchingΓÇóAllows for a high power efficient (ultra-low power) electric control of anisotropic magneto-resistance (AMR) and giant magneto-resistance (GMR) as compared to a magnetic control observed with conventional memory systemsΓÇóWould be commercially useful as new memory means for computers, cell phones, etc.
- Detailed Technology Description
- None
- *Abstract
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Currently, magnetic random access memories (MRAMs) use a magnetic field to control corresponding magnetic states. Such systems are comparatively bulkier and are associated with high-power consumption. With ever changing life-style; the demand for faster, smaller and ultra-low power memory systems is significantly increasing. This approach allows for the development and use of a novel electric field (E-Field) controllable MRAMs based on multi-ferroics.
- *Principal Investigator
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Name: Nian-Xiang Sun
Department:
- Country/Region
- USA
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