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Deep nanopatterning focused ion beam technology (Technion)

Summary
FIB etching techniques are used to manufacture optoelectronic devices and integrated circuits. The ion beam effects on the materials used in the semiconductor industry limits the technology. The beam tail causes material decomposition and thus the technology is applicable for wide structures only. However, the industry trend to reduce structure size dictates high aspect ratio - deep milling at narrow width and control on a nanometric scale of FIB processing. So far, no technology exists to answer these demands.Our technology is unique and enables production of structure with high aspect ratio on a nanometric scale. Materials decomposition is prevented using coating. The coating acts as a dynamic mask thus preventing materials decomposition exposed to the beam tail without interfering with the process. We use Titanium dioxide layer coating that acts as a saturated absorber. The high intensity center of the beam is not affected while the low intensity beam tail is absorbed. Thicker coating withstands longer milling time and enables reaching to higher depths.
Technology Benefits
High aspect ratio of depth versus width– at least 10
Capability for fabrication of patterns less than 20nm wide
Flexible implementation
Tested and proven technology
ID No.
COM-0910
Country/Region
Israel

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