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Method for Fabrication of Active-Matrix Display Panels 有源矩陣顯示基板製備技術

Summary

The demand for high quality and high information content liquid crystal display (LCD) and Organic Light-Emitting Diode (OLED) display has been driving the switch from passive to active matrix (AM) panels. For small size, high information-content, high functional integration and low-power consumption displays, it is recognized that poly-Si based, rather than a-Si based transistors must be used. Since manufacturing cost of an active-matrix panel is directly proportional to the number of masking steps required, there are numerous steps of producing conventional active-matrix display panel, the cost is quite high.

This invention is about a combination of techniques for using less number of steps to fabricate the active-matrix display panels. It includes (1) employing the technique of replacing poly-Si with aluminum to achieve low-resistance metal interconnection and high performance TFTs with low source/drain parasitic resistance; (2) employing poly-Si as pixel electrodes for AMLCD and AMOLED. Through combining the techniques listed above, the deposition and patterning of ITO layer can be eliminated. Compared to the conventional poly-Si and a-Si TFT display panel technologies, at least 2-3 masks can be reduced by the formation of low resistance two-level metal interconnections from one metal layer, 3-mask poly-Si TFTs and poly-Si pixel electrodes. Therefore, a very simple system-on-panel active-matrix display panel fabrication process is developed.

This invention can be commonly used in system-on-panel AMLCD and AMOLED displays.

Technology Benefits

1. Reduced manufacturing cost
2. Higher manufacturing yield
3. Simpler fabrication process

Technology Application

- System-on-panel AMLCD and AMOLED displays

Supplementary Information

Patent Number: HK1118639A1
Application Number: HK2008110074A
Inventor: KWOK HOI SING | WONG MAN | MENG ZHIGUO | ZHANG DONGLI | SUN JIAXIN | ZHU XIULING
Priority Date: 25 Nov 2005
Priority Number: HK1118639A1
Application Date: 10 Sep 2008
Publication Date: 7 Jun 2013
Assignee Applicant: The Hong Kong University of Science & Technology
Title: METHOD FOR FABRICATION OF ACTIVE-MATRIX DISPLAY PANELS
Usefulness: METHOD FOR FABRICATION OF ACTIVE-MATRIX DISPLAY PANELS
Summary: Active matrix thin film transistor array for use in LCD and organic LED display (both claimed).
Novelty: Active matrix thin film transistor array for use in LCD, has array with thin film transistors comprising pixel electrodes made of polycrystalline silicon, and source, drain and gate electrodes made of specific metal

Industry

Electronics

Sub Category

Display

Application Date

10 Sep 2008

Application No.

Hong Kong 08110074.0

Patent Information

Hong Kong HK1118639

ID No.

TTC.PA.278S

Country/Region

Hong Kong