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Integrated HEMT and Lateral Field-Effect Rectifier Combinations, Methods, and SystemsAlGaN/GaN 增強型異質結場效應晶體管的製備

Summary

III-nitride compound semiconductors have the merits of wide band gap, high breakdown field, and large thermal conductivity, which results in well designed AlGaN/GaN heterojunction field-effect transistors. This transistor is capable of high temperature operation, suitable for high temperature integrated circuits. In the direct-coupled FET logic (DCFL), enhancement-mode HFETs are used as the drives while the depletion-mode HFETs are used as the load. In order to implement DCFL integrated circuits, a technology for monolithic initegration of enhancement-mode and depletion-mode (E/D) HFETs is needed.

This invention discloses a method of fabricating enhancement-mode AlGaN/GaN HFETs using fluoride-based plasma treatment and post-gate annealing.
It is effective and highly reproducible for fabricating self-aligned E-mode AlGaN/GaN HFETs. With the use of fluorine ions, which have strong electronegativity, it reduces treatment or implantation induced damages while maintaining stability.

This invention can be applicable in Single supply voltage RF/microwave integrated circuits like low-noise amplifiers, oscillators, mixers, and power amplifiers as well as in GaN-based digital ICs for high temperature electronics, which are demanded by automotive and aerospace applications, chemical reactor controllers, and oil-drilling equipment, etc.

Technology Benefits

1. A strictly self-aligned approach
2. No additional photolithography: cost saving
3. Additional reduction of gate leakage current: wider operating range, no need for level shifting
4. Excellent cross-sample uniformity

Technology Application

- Single supply voltage RF/microwave integrated circuits: low-noise amplifiers, oscillators, mixers, and
power amplifiers
- GaN-based digital ICs for high temperature electronics, which are demanded by automotive and
aerospace applications, chemical reactor controllers, and oil-drilling equipment, etc.

Supplementary Information

Patent Number: CN101562182B
Application Number: CN200910133336A
Inventor: Chen, JING | Chen, Wan-jun | Zhou, Chun-hua
Priority Date: 2 Apr 2008
Priority Number: CN101562182B
Application Date: 2 Apr 2009
Publication Date: 8 Aug 2012
IPC Current: H01L002706 | H01L00218248 | H01L002943
Assignee Applicant: The Hong Kong University of Science & Technology
Title: Integrated hemt and a combination, method as well as a system of a horizontal field effect rectifier
Usefulness: Integrated hemt and a combination, method as well as a system of a horizontal field effect rectifier
Summary: An integrated power device structure for a switch power converter (claimed).
Novelty: Integrated power device structure for switch power converter, comprises mixed diode including parallel Schottky diode and field control diode, and heterojunction field effect transistor

Industry

Electronics

Sub Category

Circuit Design

Application Date

2 Apr 2009

Application No.

Chinese 200910133336.4

Patent Information

Chinese ZL200910133336.4

ID No.

TTC.PA.265

Country/Region

Hong Kong