Method of Metal-Induced Crystallization of Amorphous Silicon非晶硅金屬誘導晶化
Display is a large and still continuously expanding market. Flat-panel display is the dominating segment in the industry which involves the use of active-matrix driving technology. In conventional active matrix displays, thin film transistors (TFTs) are formed by amorphous silicon (a-Si). However, it has been difficult to use the amorphous silicon TFT for advanced applications such as a liquid crystal display having very high resolution. For lower power consuming more compact structures, polycrystalline Si (poly-Si) is needed.
The present invention provides a method of forming the active polycrystalline layer using the technique of patterned crystallization with the assistance of metal impurities. The sufficient concentration of metal is introduced into major regions to induce crystallization while insufficient concentration of metal is also introduced into the minor regions to induce crystallization so as to enhance the local crystallization rate. With several other procedures, resulting polycrystalline thin film consists of relatively large crystalline grains with well-defined directions of grain growth. The alignment misplacement caused by the shrinkage of glass can be avoided and the crystallization time can be well controlled with the use of poly-Si layer.
The invention can be applied in AMLCD and AMOLED such as for TV, monitor and 3G phone PDA in the flat-panel display industry.
1. Able to control grain growth in active area
2. Reduce alignment misplacement caused by the shrinkage of the substrate during the crystallization
3. No need for nickel gettering
4. Predetermine initial crystallization points, so the crystallization time can be well controlled
5. Exhibits excellent uniformity for the poly-Si film with the same grain size and same grain shape
6. Able to obtain Hexagonal honeycomb grains and semi-parallel grains
- AMLCD and AMOLED for high definition televisions, monitors, 3G phones and PDAs
Patent Number: HK1114465A1
Application Number: HK2008103847A
Inventor: KWOK HOI SING | WONG MAN | MENG ZHIGUO | ZHAO SHUYUN | WU CHUNYA
Priority Date: 13 Mar 2006
Priority Number: HK1114465A1
Application Date: 7 Apr 2008
Publication Date: 5 Apr 2013
Assignee Applicant: The Hong Kong University of Science & Technology
Title: METHOD OF METAL-INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON
Usefulness: METHOD OF METAL-INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON
Electronics
Semiconductor
7 Apr 2008
Hong Kong 08103847.1
Hong Kong HK1114465
TTC.PA.293S
Hong Kong
