Methods for Forming Laterally Crystallized Polysilicon and Devices Fabricated Therefrom
- Summary
- Portable electronic devices such as laptop computers, personal digital assistants, and portable DVD players and the like have become increasingly common and popular. One reason for the success of such devices is the advance in the technology of low power, lightweight and inexpensive flat-panel displays. Future devices such as third generation mobile phones will require similar displays.
One of the major factors behind the advances in flat-panel display technology has been the replacement of slower electronic components fabricated from amorphous silicon with faster components made from polysilicon. The fabrication of polysilicon and devices constructed therefrom has become an important issue.
This invention is related to novel methods for forming laterally crystallized polysilicon; such methods are capable of reducing the metal residue in metal-induced laterally crystallized (MILC) polysilicon. The invention father relates to devices fabricated from such polysilicon. The invention presents a method of forming laterally-crystallised polysilicon, comprising the steps of: (a) providing a layer of amorphous silicon on a substrate, (b) providing a metallic crystallization-inducing agent to a part of said layer of amorphous silicon, (c) performing a metal-induced first lateral crystallization step at a temperature of between 400.degree. C. and 650.degree. C. to form first regions of metal-induced laterally crystallized polysilicon, and (d) performing a second lateral crystallization step to extend said regions of laterally crystallized polysilicon.
Viewed from another broad aspect the present invention also provides a method of forming laterally-crystallized polysilicon from amorphous silicon comprising a metal-induced first lateral crystallization step followed by a second lateral crystallization step. Viewed from a still further broad aspect the present invention also provides a semiconductor device comprising polysilicon, which is formed from amorphous silicon by performing a metal-induced first lateral crystallization step followed by a second lateral crystallization step.
- Technology Benefits
- - The novel methods are capable of reducing the metal residue in metal-induced laterally crystallized (MILC) polysilicon
- Technology Application
- - For use in portable electronic devices such as laptop computers, personal digital assistants, and portable DVD players
- Supplementary Information
- Patent Number: US6900082B2
Application Number: US2003373378A
Inventor: Wong, Man | Ma, Tianfu | Meng, Zhiguo
Priority Date: 24 Feb 2003
Priority Number: US6900082B2
Application Date: 24 Feb 2003
Publication Date: 31 May 2005
IPC Current: H01L002120
US Class: 438149 | 257E21133 | 438488
Assignee Applicant: The Hong Kong University of Science & Technology
Title: Methods for forming laterally crystallized polysilicon and devices fabricated therefrom
Usefulness: Methods for forming laterally crystallized polysilicon and devices fabricated therefrom
Summary: For forming laterally crystallized polysilicon useful in fabrication of semiconductor device (claimed), e.g. micro-mechanical device.
Novelty: Formation of laterally crystallized polysilicon for use in semiconductor device fabrication, by performing metal-induced first lateral crystallization, and performing second lateral crystallization
- Industry
- Electronics
- Sub Category
- Semiconductor
- Application Date
- 24 Feb 2003
- Application No.
- US 10/373378
- Patent Information
- US 6900082
- ID No.
- TTC.PA.163
- Country/Region
- Hong Kong
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