CMOS Voltage Reference
- Summary
- Almost all circuit systems require a voltage reference. A voltage reference provides a temperature and supply independent voltage. In addition, this voltage reference mudt be able to operate under low-voltage low-power conditions and can be implemented in standard CMOS process instead of expensive Bipolar or BiCMOS process.
The invented voltage reference is an all-CMOS design. This reference does not require any extra special circuit component or specific simulation model, so it is suitable in all-CMOS circuit systems. Moreover, a time-consuming post-fabrication resistor trimming procedure to improve the temperature-independent performance of the conventional designs by on-chip microsurgery is not required for the invented design. As a result, the chip size of the invented voltage reference was implemented in standard CMOS process. From the measured results, it is able to operate at as low as 1.5V supply and consumes only a little current. The variation of the reference voltage under the change of temperature and supply voltage are only 3.8mV from 40 to 80 degree celcius and 4mV from 1.5V to 3V, respectively.
- Technology Benefits
- 1. Low voltage
2. Low power
3. All CMOS
4. Small chip area
5. More power and high supply voltage
- Technology Application
- - Analog and digital circuit system
- Battery-operated portable commercial products
- Supplementary Information
- Patent Number: US6441680B1
Application Number: US2001819801A
Inventor: Leung, Ka Nang | Mok, Kwok Tai Philip | Kwok, Ka Chun
Priority Date: 29 Mar 2001
Priority Number: US6441680B1
Application Date: 29 Mar 2001
Publication Date: 27 Aug 2002
IPC Current: G05F000326
US Class: 327541
Assignee Applicant: The Hong Kong University of Science & Technology
Title: CMOS voltage reference
Usefulness: CMOS voltage reference
Summary: For analog circuit such as linear regulators, data converters, etc.
Novelty: CMOS reference voltage generating circuit for linear regulator, outputs reference voltage which is obtained from the difference between gate-source voltage of p and n type transistors and its gain factor
- Industry
- Electronics
- Sub Category
- Semiconductor
- Application Date
- 29 Mar 2001
- Application No.
- US 09/819801
- Patent Information
- US 6441680
- ID No.
- TTC.PA.130
- Country/Region
- Hong Kong
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