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Control of grain size, shape, and boundary location in semiconductor thin films using pulsed laser melting

Summary: James Im, Ph.D..

Technology Benefits: Can manufacture thin film metal layers for semiconductor applications while removing the problem of electromigrationPrecise control over grain size, shape, and boundaries in the thin film Incorporation of a beam mask and translation stage allows for quick and precise control over the area that is exposed to the laser irradiation.Patent information:Patent Issued (WO/03084688)Patent Issued (US7,399,359)Tech Ventures Reference: IR M01-050

Technology Application: Control grain properties in thin film semiconductors for research applicationsConvert amorphous metals to crystalline layers without high temperatureManufacture single crystalline metal layers, including aluminum and copper, for applications in the photovoltaic and display industries.

Detailed Technology Description: James Im, Ph.D..

*Abstract: None

*Inquiry: Jim AloiseColumbia Technology VenturesTel: (212) 854-8444Email: TechTransfer@columbia.edu

*IR: M01-050

*Principal Investigator

*Publications: J. B. Choi, Min H. Choi, U.-J. Chung, A. B. Limanov, and James S. Im. "The Origin and Implications of (111)-Textured Grains Obtained via Nucleation and Growth of Solids in Pulsed-Laser-Quenched Al Films on SiO2" Mater. Res. Soc. Symp. Proc. 2007;979.

*Web Links: Patent number: TW521387USPTO: US 7,115,503

Country/Region: USA

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