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Control of grain size, shape, and boundary location in semiconductor thin films using pulsed laser melting

總結

James Im, Ph.D..

技術優勢

Can manufacture thin film metal layers for semiconductor applications while removing the problem of electromigrationPrecise control over grain size, shape, and boundaries in the thin film Incorporation of a beam mask and translation stage allows for quick and precise control over the area that is exposed to the laser irradiation.Patent information:Patent Issued (WO/03084688)Patent Issued (US7,399,359)Tech Ventures Reference: IR M01-050

技術應用

Control grain properties in thin film semiconductors for research applicationsConvert amorphous metals to crystalline layers without high temperatureManufacture single crystalline metal layers, including aluminum and copper, for applications in the photovoltaic and display industries.

詳細技術說明

James Im, Ph.D..

*Abstract

None

*Inquiry

Jim AloiseColumbia Technology VenturesTel: (212) 854-8444Email: TechTransfer@columbia.edu

*IR

M01-050

*Principal Investigation

*Publications

J. B. Choi, Min H. Choi, U.-J. Chung, A. B. Limanov, and James S. Im. "The Origin and Implications of (111)-Textured Grains Obtained via Nucleation and Growth of Solids in Pulsed-Laser-Quenched Al Films on SiO2" Mater. Res. Soc. Symp. Proc. 2007;979.

*Web Links

Patent number: TW521387USPTO: US 7,115,503

國家/地區

美國