Photoresponse in Heterojunction Structure of Single-Walled Carbon Nanotubes and Silicon for Optoelectonics Applications
- Technology Benefits
- The system:ΓÇóIs highly sensitiveΓÇóIs highly reproducible & highly responsiveΓÇóIs associated with easier fabrication steps and scalable dimensionsΓÇóEnables higher photo-induced/on-off switching ratios at lower reverse-bias voltages as compared to conventional systemsΓÇóIs associated with a lower cost and power consumption as compared to conventional systemsΓÇóWould be commercially useful for the following applications:o Multi-functional optoelectronic switcheso Photo-transistorso Optoelectronic logic gateso Complex optoelectronic digital circuitso Diverse analog, digital, sensing, and imaging applications
- Detailed Technology Description
- None
- *Abstract
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Currently, the majority of photo-detectors function as p-n, p-i-n, or Scottky photo-diodes. Such detectors are extremely popular due to their broad spectral responsivity, excellent linearity, and high dynamic range of operation. However, these detectors are associated with possible limitations such as limited ability to render high ratio switches and a limited optical power requirement. This invention discloses a novel photo-detection system comprising a hetero-junction structure made up of SWNTs and Silicon for effective opto-electronic applications.
- *Principal Investigator
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Name: Yung Joon Jung
Department:
Name: Hyun Young Jung
Department:
Name: Swastik Kar
Department:
Name: Young Lae Kim
Department:
Name: Young-Kyun Kwon
Department:
- Country/Region
- USA
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