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Photoresponse in Heterojunction Structure of Single-Walled Carbon Nanotubes and Silicon for Optoelectonics Applications

技術優勢

The system:ΓÇóIs highly sensitiveΓÇóIs highly reproducible & highly responsiveΓÇóIs associated with easier fabrication steps and scalable dimensionsΓÇóEnables higher photo-induced/on-off switching ratios at lower reverse-bias voltages as compared to conventional systemsΓÇóIs associated with a lower cost and power consumption as compared to conventional systemsΓÇóWould be commercially useful for the following applications:o Multi-functional optoelectronic switcheso Photo-transistorso Optoelectronic logic gateso Complex optoelectronic digital circuitso Diverse analog, digital, sensing, and imaging applications

詳細技術說明

None

*Abstract

Currently, the majority of photo-detectors function as p-n, p-i-n, or Scottky photo-diodes. Such detectors are extremely popular due to their broad spectral responsivity, excellent linearity, and high dynamic range of operation. However, these detectors are associated with possible limitations such as limited ability to render high ratio switches and a limited optical power requirement. This invention discloses a novel photo-detection system comprising a hetero-junction structure made up of SWNTs and Silicon for effective opto-electronic applications.

*Principal Investigation

Name: Yung Joon Jung

Department:

Name: Hyun Young Jung

Department:

Name: Swastik Kar

Department:

Name: Young Lae Kim

Department:

Name: Young-Kyun Kwon

Department:

國家/地區

美國