Improved 3D Transistor
- 技術優勢
- Extremely low operating voltage which lowers operating powerAvoids costly and unusual substrate structures common in 2DLeverages conventional techniques to fabricate 3D transistors
- 技術應用
- Mobile/Portable electronicsData centers and servers
- 詳細技術說明
- None
- *Abstract
-
This case helps reinvent the transistor by building on the success of Berkeley’s 3D FinFET/Trigate/Tri-Gate methods and devices, with increased focus on the negative capacitance of the MOS-channel and ferroelectrics, and an unconventional effective oxide thickness approach to the gate dielectric. Proof of concept devices have been demonstrated at 30nm gate length and allow for use of thinner ferroelectric films than 2D negative capacitance transistors (e.g. see http://digitalassets.lib.berkeley.edu/techreports/ucb/text/EECS-2014-226.pdf ). The devices also performed at low operating voltage which lowers operating power.
- *IP Issue Date
- Jun 8, 2017
- *Principal Investigation
-
Name: ChenMing Hu
Department:
- 申請號碼
- 20170162702
- 其他
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Tech ID/UC Case
25614/2016-088-0
Related Cases
2016-088-0
- 國家/地區
- 美國
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