Control of grain size, shape, and boundary location in semiconductor thin films using pulsed laser melting
James Im, Ph.D..
Can manufacture thin film metal layers for semiconductor applications while removing the problem of electromigrationPrecise control over grain size, shape, and boundaries in the thin film Incorporation of a beam mask and translation stage allows for quick and precise control over the area that is exposed to the laser irradiation.Patent information:Patent Issued (WO/03084688)Patent Issued (US7,399,359)Tech Ventures Reference: IR M01-050
Control grain properties in thin film semiconductors for research applicationsConvert amorphous metals to crystalline layers without high temperatureManufacture single crystalline metal layers, including aluminum and copper, for applications in the photovoltaic and display industries.
James Im, Ph.D..
美國
