采用接地導電柵网的直流等离子体离子注入裝置
- 標題
- 采用接地導電柵网的直流等离子体离子注入裝置
- 總結
-
This novel plasma immersion ion implantation technology is performed in a low pressure steady state direct current and long-pulse mode, with the help of a grounded / biased conducting grid positioned between the wafer stage and plasma source.
- 技術應用
-
•For use in microelectronics, biomedical, and materials industries
- 申請日期
- 22/09/2004
- ID號碼
- ZL00106152.6
- 國家/地區
- 香港
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