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采用接地導電柵网的直流等离子体离子注入裝置

IP Title: 采用接地導電柵网的直流等离子体离子注入裝置

Summary: This novel plasma immersion ion implantation technology is performed in a low pressure steady state direct current and long-pulse mode, with the help of a grounded / biased conducting grid positioned between the wafer stage and plasma source.

Technology Application: •For use in microelectronics, biomedical, and materials industries

Application Date: 22/09/2004

ID No.: ZL00106152.6

Country/Region: Hong Kong

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