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Nano-Scale Metal-Insulator-Metal (MIM) Junction Realization through Conventional UV Photolithography and Wafer Polishing Techniques
技术优势
Economical volume productionSimplified and scalable manufacturing process IC/MEMS fabrication foundry accepted
技术应用
mass producing MIM diodes
详细技术说明
USF inventors have developed a new CMOS-compatible process that is suitable for mass production of MIM tunneling diodes with sub-micron sized junction. Through a strategic combination of standard UV photolithography, regular wafer polishing techniques, and atomic layer deposition (ALD), MIM diode nano-scale junctions can be readily manufactured for volume production.
国家/地区
美国
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