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Photoelectrochemical Etching for Chip Shaping Of LEDs


技术优势

Increased external quantum efficiencyLow cost etchingRapid etchingEliminate the need of mechanical etchingPossible automation of the etching process


技术应用

SemiconductorsLED shaping


详细技术说明

Researchers at the University of California, Santa Barbara have developed a novel process to chip shape LEDs though photochemical (PEC) etching. This process can directly etch the material in between LEDs that are grown on III-V substrates. By varying the angle of the incident light during PEC etching, the angle of the resulting sidewalls can be controlled to create sloped sidewalls. These walls can then scatter guided modes out of the material rather than reflecting them back, to increase the external quantum efficiency.


附加资料

Patent Number: US8569085B2
Application Number: US2009576946A
Inventor: Tamboli, Adele | Hu, Evelyn L. | Speck, James S.
Priority Date: 9 Oct 2008
Priority Number: US8569085B2
Application Date: 9 Oct 2009
Publication Date: 29 Oct 2013
IPC Current: H01L002100 | H01L003100
US Class: 438031 | 257079 | 257E21599 | 257E33023
Assignee Applicant: The Regents of the University of California
Title: Photoelectrochemical etching for chip shaping of light emitting diodes
Usefulness: Photoelectrochemical etching for chip shaping of light emitting diodes
Summary: Method of fabricating a semiconductor device.
Novelty: Fabrication of semiconductor device by performing photoelectrochemical etch for chip shaping of device comprising Groups III-V semiconductor material in order to extract light emitted into guided modes trapped in semiconductor material


主要类别

电子


细分类别

半导体


申请号码

8569085


其他

Background

Light emitting diodes’ (LEDs) external quantum efficiency is limited by light emitted into guided modes being trapped in the material. When wafers are diced, the resulting sidewalls are smooth and vertical resulting in most of the light reflecting back into the material where it is eventually lost. To counteract this phenomenon, shaping is done to modify the geometry to form non rectilinear designs, which decrease the amount of trapped light. This chip shaping involves shaping the material and substrate which may have different compositions. Moreover, the shaping is typically accomplished through crystallographic wet or dry etching or by device sawing using specialty blades.

 


Additional Technologies by these Inventors


Tech ID/UC Case

23784/2009-157-0


Related Cases

2009-157-0


国家/地区

美国

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